^emi-l.onauctoi ij-^ioaucti, one, 20 stern ave. springfield, new jersey 07081 u.s.a. blu45/12 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 u.h.f. power transistor n-p-n silicon planar epitaxial transistor in sot-119 envelope primarily intended for use in mobile radio transmitters in the 470 mhz communications band. features ? multi-base structure and emitter-ballasting resistors for an optimum temperature profile. ? internal matching to achieve an optimum wideband capability and high power gain. ? gold metallization ensures excellent reliability. the transistor has a 6-lead flange envelope with a ceramic cap. all leads are isolated from the flange. quick reference data r.f. performance up to " mode of operation narrow band; c.w. rn = 25 c in a c vce v 12,5 ommon-emitter f mhz 470 class-b circuit pl w 45 gp db >4,a ;c >55 mechanical data sot-119 (see fig. 1). dimensions in mm 2 2 max 12,96 3,35 3,04 (2x) 1 2,5 t ??? 12,2 *- li ~"~ i 4,50 4,05 1 7,5 max t 25 m ? ? ? ..s ? 0,14 ceramic i 13 max i \ metal min, 0,6 mm (6 kg.cm) max. 0,75 mm (7,5 kg.cm) recommended screw: cheese-head 4-40 unc/2a torque on screw: heatsink compound must be applied and evenly distributed. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
blu45/12 storage temperature operating junction temperature ratings limiting values in accordance with the absolute maximum system (iec 134} collector-base voltage (open emitter) peak value vcbom collector-emitter voltage (open base) vceo emitter-base voltage (open collector) vebo collector current d.c. or average ic (peak value);f> 1 mhz icm total power dissipation at tmb - 25 c; f > 1 mhz ptot 'stg max. max. max. max. max. 36 v 16,5 v 4 v 9 a 27 a max. 87 w -65to+ 150 c max. 200 c (w) 0 0 ,__ fig. 2 power/temperature derating curves. i continuous operation (f> 1 mhz). ii short-time operation during mismatch (1> 1 mhz). maximum thermal resistance dissipation = 54 w; tamb = 25 c from junction to mounting base (r.f. operation) from mounting base to heatsink rthj-mb rth mb-h max. 1,7 k/w 0,2 k/w
blu45/12 characteristics tj = 25 c unless otherwise specified- collector-base breakdown voltage open emitter; l = 100 mal collector-emitter breakdown voltage open base; iq = 2qo ma emitter-base breakdown voltage open collector; ie = 20 ma collector cut-off current second breakdown energy l - 25 riih; f = 50. hz; rbe = 10 n d.c. current gain collector capacitance at f ? 1 mhz ie = ie = 0;vcb = 12,5v feedback capacitance at f = 1 mhz collector-flange capaci.tance v(br)cbo min- 36 v v(br)ceo min- 16,5 v. v(br)ebo mm. 4 v ices max- 44 ma esbr "fe ccf min. 15 mj mm. typ. 15 60 typ. 170 pf typ. 100 pf typ. 3 pf 100 fig. 3 d.c. current gain versus collector current; tj = 25 c."' 400 7z93cio 0 ' id vcb (v) zo fig. 4 output capacitance versus
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